Hao Yu, P. Hsu, A. Vais, E. Simoen, N. Waldron, N. Collaert
{"title":"Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy","authors":"Hao Yu, P. Hsu, A. Vais, E. Simoen, N. Waldron, N. Collaert","doi":"10.23919/IWJT.2019.8802885","DOIUrl":null,"url":null,"abstract":"Electron traps are detected from vertical n<sup>+</sup>-GaAs/n<sup>−</sup>-InGaP/p<sup>+</sup>-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (t<inf>w</inf>) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electron traps are detected from vertical n+-GaAs/n−-InGaP/p+-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (tw) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.
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