W. Jadwisienczak, H. Lozykowski, A. Bensaoula, O. Monteiro
{"title":"Luminescence of Pr and Tm ions implanted into AlN thin films","authors":"W. Jadwisienczak, H. Lozykowski, A. Bensaoula, O. Monteiro","doi":"10.1109/ISDRS.2003.1272000","DOIUrl":null,"url":null,"abstract":"In this presentation, we report on the cathodoluminescence and photoluminescence (PL) properties of Pr and Tm ions implanted into AlN films grown by plasma source molecular beam epitaxy. To optically activate incorporated impurities and remove ion implantation-induced damages, the RE-implanted AlN samples were given isochronal thermal annealing treatments at a temperature of 1050 /spl deg/C in NH/sub 3/.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this presentation, we report on the cathodoluminescence and photoluminescence (PL) properties of Pr and Tm ions implanted into AlN films grown by plasma source molecular beam epitaxy. To optically activate incorporated impurities and remove ion implantation-induced damages, the RE-implanted AlN samples were given isochronal thermal annealing treatments at a temperature of 1050 /spl deg/C in NH/sub 3/.
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