{"title":"Considerations on Design of Highly-Integrated Millimeter-Wave Transceivers in SiGe HBT","authors":"V. Issakov, S. Trotta","doi":"10.1109/IEDM.2018.8614534","DOIUrl":null,"url":null,"abstract":"This paper addresses considerations on design of highly-integrated transceivers at mm-wave frequencies. Several aspects are discussed such as SiGe HBT scaling and co-design optimization. A highly-integrated chip operating at V-band for backhaul communication is shown as an example.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614534","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper addresses considerations on design of highly-integrated transceivers at mm-wave frequencies. Several aspects are discussed such as SiGe HBT scaling and co-design optimization. A highly-integrated chip operating at V-band for backhaul communication is shown as an example.
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