In-Situ Extraction of the Thermal Impedance of GaN Power HEMTs Embedded in PCB-based Power Circuits

A. P. Catalano, C. Scognamillo, V. d’Alessandro, L. Codecasa
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引用次数: 1

Abstract

This paper validates an innovative thermal impedance (ZTH) extraction technique against a state-of-the-art GaN-based power HEMT embedded in a PCB-based power circuit. Differently from traditional approaches based on direct or indirect temperature measurements, the technique provides the junction-to-ambient ZTHj-a - that is, the in-situ ZTH without any need for (i) thermocouples/infrared cameras or (ii) specific equipment like thermochuck and cold-plates. The accuracy of the technique is assessed by adopting the 'simulated experiments' strategy: the technique is applied to calibrated electrothermal simulations emulating the experiments, and the extracted junction-to-ambient ZTH is successfully compared to a reference one preliminarily determined with numerical simulations.
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基于pcb的功率电路中GaN功率hemt热阻抗的原位提取
本文验证了一种创新的热阻抗(ZTH)提取技术,该技术针对嵌入在基于pcb的电源电路中的最先进的基于gan的功率HEMT。与基于直接或间接温度测量的传统方法不同,该技术提供了连接到环境的ZTHj-a -即不需要(i)热电偶/红外摄像机或(ii)热吸盘和冷板等特定设备的原位ZTH。采用“模拟实验”策略对该技术的准确性进行了评估:将该技术应用于模拟实验的校准电热模拟,并成功地将提取的结环ZTH与数值模拟初步确定的参考ZTH进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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