{"title":"Test SRAMs for characterizing alpha particle tracks in CMOS/bulk memories","authors":"M. Buehler, B. Blaes, G. Soli","doi":"10.1109/ICMTS.1990.161723","DOIUrl":null,"url":null,"abstract":"Describes a methodology for using alpha particles to provide an independent measure of the cross section of an upset sensitive region in test SRAMs (static random-access memories). In addition, the thickness of over-layers and the alpha-particle collection depth were determined. These parameters are necessary in order to make precise estimates of the upset rates of memories due to cosmic-ray strikes. Measurements were made on 1.6- mu m n-well CMOS 4-kb test SRAMs irradiated with an Am-241 alpha-particle source.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Describes a methodology for using alpha particles to provide an independent measure of the cross section of an upset sensitive region in test SRAMs (static random-access memories). In addition, the thickness of over-layers and the alpha-particle collection depth were determined. These parameters are necessary in order to make precise estimates of the upset rates of memories due to cosmic-ray strikes. Measurements were made on 1.6- mu m n-well CMOS 4-kb test SRAMs irradiated with an Am-241 alpha-particle source.<>
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