{"title":"Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology","authors":"G. Cussac, L. Artola, T. Nuns, S. Ducret","doi":"10.1109/RADECS50773.2020.9857680","DOIUrl":null,"url":null,"abstract":"This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS50773.2020.9857680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.
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