O. Jardel, Manuel Potércau, V. M. Leal, S. Rochette, J. Prades, A. Ghiotto, H. Leblond, N. Deltimple, J. Villemazet
{"title":"Feasibility Demonstration of a Ka-Band Linearized Channel Amplifier in Silicon Technology for Space Applications","authors":"O. Jardel, Manuel Potércau, V. M. Leal, S. Rochette, J. Prades, A. Ghiotto, H. Leblond, N. Deltimple, J. Villemazet","doi":"10.23919/EuMIC.2019.8909647","DOIUrl":null,"url":null,"abstract":"This paper presents the design, implementation and characterizations of a Ka-Band [17.3 - 20.2 GHz] linearized channel amplifier (LCAMP) for space Travelling Wave Tube Amplifier (TWTA). The 130nm SiGe BiCMOS technology from ST Microelectronics (BiCMOS9MW) has been used. It validates the feasibility of a LCAMP and all its constitutive building blocks in silicon technologies at such high frequencies with high linearity requirements, hence allowing to consider a drastic mass, footprint and cost reduction of such equipment.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"710 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the design, implementation and characterizations of a Ka-Band [17.3 - 20.2 GHz] linearized channel amplifier (LCAMP) for space Travelling Wave Tube Amplifier (TWTA). The 130nm SiGe BiCMOS technology from ST Microelectronics (BiCMOS9MW) has been used. It validates the feasibility of a LCAMP and all its constitutive building blocks in silicon technologies at such high frequencies with high linearity requirements, hence allowing to consider a drastic mass, footprint and cost reduction of such equipment.