Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama
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引用次数: 0
Abstract
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.
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