A self-consistent junction temperature estimation methodology for nanometer scale ICs with implications for performance and thermal management

K. Banerjee, Sheng-Chih Lin, A. Keshavarzi, S. Narendra, V. De
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引用次数: 61

Abstract

Accurate estimation of the silicon junction (or die) temperature in high-end microprocessors is crucial for various performance analyses and also for chip-level thermal management. This work introduces for the first time, the notion of self-consistency in estimating the die temperature for sub-100 nm CMOS technologies by taking into account various electrothermal couplings between supply voltage, operating frequency, power dissipation and die temperature. It also comprehends chip-level reliability constraints and the impact of employing various packaging and cooling solutions in an integrated manner. The self-consistent solutions of die temperature are shown to have significant implications for evaluating various power-performance-reliability-cooling cost tradeoffs and can be used to optimize the performance of nanoscale ICs.
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纳米级集成电路的自一致结温估计方法及其对性能和热管理的影响
准确估计高端微处理器中的硅结(或芯片)温度对于各种性能分析和芯片级热管理至关重要。这项工作首次引入了自一致性的概念,通过考虑电源电压、工作频率、功耗和芯片温度之间的各种电热耦合来估计sub-100 nm CMOS技术的芯片温度。它还理解了芯片级可靠性约束以及以集成方式采用各种封装和冷却解决方案的影响。芯片温度的自一致解决方案对评估各种功率-性能-可靠性-冷却成本权衡具有重要意义,并可用于优化纳米级集成电路的性能。
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