Sub-surface nanometrology of semiconductor wafers and graphene quality assessment via terahertz route

A. Rahman, Aunik K. Rahman
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引用次数: 2

Abstract

Modern integrated circuit (IC) packaging faces challenges for higher speed in a smaller dimension achieved due to the 10 nm or smaller process node. While ICs are being packaged in 3D format, it is often not possible to measure features and/or defects in a non-destructive route. This paper reports a technique for nanometrology using bigger wavelengths such as those within the terahertz range. Practical measurements of dot pattern and other patterns on a 3D chip under the surface have been carried out. Two graphene have been imaged for quantifying the number of layers in the exfoliate also the thickness of each graphene sheet in the exfoliate. The results check out well compared to the standard techniques such as the SEM. In addition, a criterion for graphene’s quality assessment in terms of direct measurement of number of sheets in an exfoliate has been proposed. Thus, the nanometrology reported here, is a versatile tool for nanoscale measurements.
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半导体晶圆的亚表面纳米测量和石墨烯的太赫兹质量评估
由于10纳米或更小的工艺节点,现代集成电路(IC)封装面临着在更小尺寸下实现更高速度的挑战。当集成电路以3D格式封装时,通常不可能以非破坏性的方式测量特征和/或缺陷。本文报道了一种使用更大波长(如太赫兹范围内的波长)的纳米计量技术。在表面下的三维芯片上进行了点图案和其他图案的实际测量。对两个石墨烯进行了成像,以量化剥离层中的层数以及剥离层中每个石墨烯片的厚度。与扫描电镜等标准技术相比,结果很好。此外,还提出了一种直接测量剥离层中石墨烯片数的质量评估标准。因此,这里报道的纳米计量学是纳米尺度测量的通用工具。
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