A fully-integrated detector for NMR microscopy in 0.13μm CMOS

J. Anders, J. Handwerker, M. Ortmanns, G. Boero
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引用次数: 9

Abstract

In this paper, we present a fully integrated receiver for NMR microscopy applications realized in a 0.13 μm CMOS technology. The chip co-integrates a planar detection coil together with a complete low-IF downconversion receiver consisting of a low noise amplifier, a quadrature downconversion mixer, a baseband amplifier stage and line drivers. The chip operates from a single 1.5V supply and consumes about 12mA of current. The active chip area is about 350×450 μm2. The detector's measured input referred voltage noise density at the operating frequency of 300 MHz is 260 pV/√Hz resulting in a measured spin sensitivity of 2×1013 spins/√Hz. Preliminary imaging experiments demonstrate the chip's capability of recording micron resolution MR images in imaging times which significantly advance the state-of-the-art.
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一个完全集成的0.13μm CMOS核磁共振显微镜检测器
在本文中,我们提出了一个完全集成的接收器,用于0.13 μm CMOS技术实现的核磁共振显微镜应用。该芯片集成了一个平面检测线圈和一个完整的低中频下变频接收器,该接收器由一个低噪声放大器、一个正交下变频混频器、一个基带放大级和线路驱动器组成。该芯片从一个1.5V的单电源工作,并消耗约12mA电流。有源芯片面积约为350×450 μm2。在300 MHz工作频率下,测量到的探测器输入参考电压噪声密度为260 pV/√Hz,测量到的自旋灵敏度为2×1013 spins/√Hz。初步的成像实验证明了该芯片在成像时间内记录微米分辨率核磁共振图像的能力,这大大推进了最先进的技术。
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