Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H/sub 2/O/sub 2/:H/sub 2/O solution

O. Yaradou, F. Ducroquet, P. Kropfield, A. Vanoverschelde
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Abstract

A HCl:H/sub 2/O:H/sub 2/O (40:4:1) solution shows highly isotropic features on GaAs etching. The etch rate of this mixture varies strongly with the age and temperature of the solution. For optimized etching, it was shown that these factors do not significantly affect the shape of the emitters but strongly influence the emission capabilities of the arrays.
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HCl:H/sub 2/O/sub 2/:H/sub 2/O溶液制备的GaAs场发射极阵列的发射性能
HCl:H/sub 2/O:H/sub 2/O(40:4:1)溶液在GaAs蚀刻上表现出高度各向同性的特征。这种混合物的蚀刻速率随溶液的年龄和温度变化很大。为了优化蚀刻,结果表明,这些因素对发射器的形状影响不大,但对阵列的发射能力有很大影响。
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