HEMT model with internal nodes access and custom CDS function for amplifier design

Abstract

This paper describes new features and versatility of a Verilog-A FET model for High-Efficiency and wideband applications, with examples in GaN technologies. It describes the flexibility of having the Internal output nodes available for design in exact wave-shaping for high-efficiency class amplifications and a more realistic CDS formulation that meets the needs of newer HEMT technologies with multiple field-plates both in RF and power electronics applications. Examples are given to demonstrate the utility of the 8-terminal model.