Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication

Abstract

A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.