T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai
{"title":"Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing","authors":"T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai","doi":"10.1109/IMFEDK.2014.6867070","DOIUrl":null,"url":null,"abstract":"The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
