3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

Abstract

This work presents a comprehensive study of MOS transistors based on Si nanowires with 〈100〉 and 〈110〉 channel orientations employing our 3D Multi-Subband Ensemble Monte Carlo simulator. The results show that 〈100〉 oriented devices provide larger current and mobility than their 〈110〉 counterparts. The differences in the spatial charge distribution are analyzed and explained in terms of the population of the different valleys. Finally, a scaling analysis is performed, down to the channel length of 8nm. In this case, the differences observed between both orientations are minimal.