Be-doped InGaAs/AlGaAs strained quantum well structures grown by molecular beam epitaxy

Abstract

The effects of doping concentration incorporated into the well material of the p-type InGaAs/AlGaAs multiple quantum well structures are investigated by photoluminescence and double crystal X-ray diffraction techniques. The increased Be doping is found to cause red shift of the dopant-related and excitonic luminescence in the well material of the structures, increase well width, deteriorate the interface quality and increase lattice mismatch. Those factors affect the positioning of the heavy and light holes in the valence band well, and thus the infrared wavelength resulted from the intersubband transition. These observations are useful for the design of p-type quantum well infrared photodetectors.