Influence of strain field on nanoscale electronic processes in silicon-based semiconductors

Abstract

The effects of strain field are studied in Si wafers implanted with heavy iodine and bismuth ions and in multi-quantum well structures. The experimental method of thermally stimulated currents without applied bias is used, and the trapping centres parameters are determined by modelling the discharge curves. In both cases, the strain field produces temperature-dependent parameters of trapping levels. So, due to the high strain field in the neighbourhood of implanted ions, energy levels broaden and cross sections become temperature dependent. In multilayer structures, for the trapping centres corresponding to strain-induced defects both concentrations and capture cross sections are temperature dependent.