Active silicon microring resonators using metal-oxide-semiconductor capacitors

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416639

Chao Li, A. Poon

引用次数: 8

Abstract

We propose an injection-type active silicon microring resonator using metal-oxide-semiconductor capacitors. Our simulations reveal a modulation bandwidth exceeding 2 GHz, a resonance shift of 0.5 nm, and an extinction ratio exceeding 20 dB.

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采用金属氧化物半导体电容器的有源硅微环谐振器

我们提出了一种采用金属氧化物半导体电容器的注入型有源硅微环谐振器。我们的模拟表明，调制带宽超过2 GHz，共振位移为0.5 nm，消光比超过20 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First IEEE International Conference on Group IV Photonics, 2004.

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