UNI-MOS: a unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Third Annual IEEE Proceedings on ASIC Seminar and Exhibit Pub Date : 1990-09-17 DOI:10.1109/ASIC.1990.186122

S. Chung, Jam-Wem Lee, Y. Chen, Po-Chin Hsu

引用次数: 0

Abstract

A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNI-MOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.<>

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UNI-MOS:用于电路仿真和寿命评估的统一SPICE内置MOSFET模型

介绍了一种用于SPICE电路仿真的轻掺杂漏极(LDD) MOS器件模型。UNI-MOS包括一套一致的直流(I-V)，交流(C-V)和热电子降解效应模型。对于I-V和C-V模型，描述了实现亚微米通道长度的传统和LDD mosfet的精确和计算效率模型的结果。演示了在电路模拟器中实现热电子效应的策略，以预测VLSI环境中器件或电路的寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Third Annual IEEE Proceedings on ASIC Seminar and Exhibit

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