G. Wolstenholme, P. Ashburn, N. Jorgensen, D. Gold, G. Booker
{"title":"Measurement and modelling of the emitter resistance of polysilicon emitter transistors","authors":"G. Wolstenholme, P. Ashburn, N. Jorgensen, D. Gold, G. Booker","doi":"10.1109/BIPOL.1988.51044","DOIUrl":null,"url":null,"abstract":"A method for measuring the emitter resistance of polysilicon emitter transistors is described that separates the interface and metal/polysilicon contact components of the emitter resistance. Results show that for devices with a continuous interfacial layer the interface resistance controls the emitter resistance and is between 200 and 450 Omega mu m/sup 2/. This resistance is found to be current dependent and good agreement between theory and experiment is obtained. Results for devices with a discontinuous interfacial layer indicate that low interface resistances (17-33 Omega mu m/sup 2/) suitable for VLSI applications can be obtained by deliberately breaking up the interfacial layer. In this case the metal contact resistance contributes significantly to the total emitter resistance.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
A method for measuring the emitter resistance of polysilicon emitter transistors is described that separates the interface and metal/polysilicon contact components of the emitter resistance. Results show that for devices with a continuous interfacial layer the interface resistance controls the emitter resistance and is between 200 and 450 Omega mu m/sup 2/. This resistance is found to be current dependent and good agreement between theory and experiment is obtained. Results for devices with a discontinuous interfacial layer indicate that low interface resistances (17-33 Omega mu m/sup 2/) suitable for VLSI applications can be obtained by deliberately breaking up the interfacial layer. In this case the metal contact resistance contributes significantly to the total emitter resistance.<>
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