{"title":"Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor","authors":"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu","doi":"10.1109/IWJT.2004.1306798","DOIUrl":null,"url":null,"abstract":"A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p/sup +/-GaAs/n/sup +/-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large /spl Delta/Ev at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f/sub T/ and f/sub max/ values are 3.1 and 4.8 GHz, respectively.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p/sup +/-GaAs/n/sup +/-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large /spl Delta/Ev at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f/sub T/ and f/sub max/ values are 3.1 and 4.8 GHz, respectively.
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