Design improvement of L-shaped tunneling field-effect transistors

Abstract

L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.