{"title":"Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition","authors":"T. Shimizu, K. Ishii, E. Suzuki","doi":"10.1109/IWGI.2003.159191","DOIUrl":null,"url":null,"abstract":"In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"383 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.
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