M. Takayanagi, T. Watanabe, R. Iijima, A. Kaneko, S. Inumiya, I. Hirano, K. Sekine, A. Nishiyama, K. Eguchi, Y. Tsunashima
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引用次数: 2
Abstract
In this paper, we review our results on HfSiON deposited by MOCVD. Characteristics of capacitors and FETs fabricated by the conventional poly-Si gate CMOS process are discussed. We cover the issues of flatband voltage shift, effective inversion-layer mobility in relation to fabrication method of HfSiON, design consideration of HfSiON for 50 nm CMOSFETs and dielectric reliability.
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