Low energy implantation technology with decaborane molecular ion beam

Abstract

Advanced sub-micron device fabrication with the Ultra Shallow Junction requires below 1 keV Boron doping. Modem ion implanters which have a capability of ion mass analysis, energy contaminants elimination, and implant angle control have been developed for precisely controlled ion implantation. However, it is well known that as the energy goes down the beam diverges due to the space charge effect, which results in the loss of the beam current and the angle deviation of each ion. It is expected to overcome this effect by using a molecular ion beam, such as decaborane (B/sub 10/H/sub 14/). This paper presents Nissin's latest low energy Boron implantation technology using decaborane molecule, which is developed vigorously as a promising future implantation technology.