M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, S. Kolev, A. van den Berg
{"title":"Thermal simulation of surface micromachined polysilicon hot plates of low power consumption","authors":"M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, S. Kolev, A. van den Berg","doi":"10.1109/SMICND.1998.732287","DOIUrl":null,"url":null,"abstract":"A simple, IC compatible, surface micromachined polysilicon membrane was technologically designed and thermally simulated by 3D finite element \"COSMOS\" program in order to investigate its capability to work as a micro hot plate for a gas sensing test structure of low power consumption. For an optimised lay-out based on four \"poly\" suspended bridges and a central \"poly\" pillar supporting the 110/spl times/110 /spl mu/m \"poly\" membrane separated from the silicon substrate by 1 /spl mu/m of air gap, temperatures as high as 673 K were obtained for an input power of 100 mW.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
A simple, IC compatible, surface micromachined polysilicon membrane was technologically designed and thermally simulated by 3D finite element "COSMOS" program in order to investigate its capability to work as a micro hot plate for a gas sensing test structure of low power consumption. For an optimised lay-out based on four "poly" suspended bridges and a central "poly" pillar supporting the 110/spl times/110 /spl mu/m "poly" membrane separated from the silicon substrate by 1 /spl mu/m of air gap, temperatures as high as 673 K were obtained for an input power of 100 mW.
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