A new and simple concept for self-aligned hybrid integration in silicon on insulator (SOI)

T. Mitze, M. Schnarrenberger, L. Zimmermann, J. Bruns, F. Fidorra, F. Kreissl, K. Janiak, H. Heidrich, K. Petermann
{"title":"A new and simple concept for self-aligned hybrid integration in silicon on insulator (SOI)","authors":"T. Mitze, M. Schnarrenberger, L. Zimmermann, J. Bruns, F. Fidorra, F. Kreissl, K. Janiak, H. Heidrich, K. Petermann","doi":"10.1109/GROUP4.2004.1416719","DOIUrl":null,"url":null,"abstract":"A concept for a SOI motherboard is introduced. AuSn solder technology is used for hybrid integration. The device adjustment on the board is realised by passive self-alignment. First results on fabricated boards are very encouraging.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A concept for a SOI motherboard is introduced. AuSn solder technology is used for hybrid integration. The device adjustment on the board is realised by passive self-alignment. First results on fabricated boards are very encouraging.
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一种新的简单的自对准绝缘体上硅(SOI)混合集成概念
介绍了SOI主板的概念。AuSn焊料技术用于混合集成。板上的器件调整是通过无源自对准实现的。初步结果是非常令人鼓舞的。
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