A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power Devices

Abstract

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic $R_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic $R_{\text{ON}}$. Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $R_{\text{ON}}$, featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $R_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.