{"title":"A 24GHz Pulse-Mode Transmitter for Short-Range Car Radar","authors":"Peng Zhao, H. Veenstra, J. Long","doi":"10.1109/RFIC.2007.380905","DOIUrl":null,"url":null,"abstract":"A pulse-mode transmitter with low carrier leakage for 24 GHz short-range car radar applications is described. A 12.5 dBm output power amplifier (continuous into 50 Omega), a pulse width and rate control circuit and a voltage reference circuit are included on the IC. The pulse-mode 24GHz output signal is modulated via the final stage bias current to achieve a RF carrier leakage of -50 dBm in the off-state. The power dissipation is 360 mW when RF is on, 117 mW when RF is off, resulting in a typical 122 mW dissipation in normal operation. The 1.2 times 0.87 mm2 IC operates from a 4.5 V supply and is fabricated in 0.25 mu m SiGe:C BiCMOS technology [1].","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A pulse-mode transmitter with low carrier leakage for 24 GHz short-range car radar applications is described. A 12.5 dBm output power amplifier (continuous into 50 Omega), a pulse width and rate control circuit and a voltage reference circuit are included on the IC. The pulse-mode 24GHz output signal is modulated via the final stage bias current to achieve a RF carrier leakage of -50 dBm in the off-state. The power dissipation is 360 mW when RF is on, 117 mW when RF is off, resulting in a typical 122 mW dissipation in normal operation. The 1.2 times 0.87 mm2 IC operates from a 4.5 V supply and is fabricated in 0.25 mu m SiGe:C BiCMOS technology [1].