I. Park, Wook-Ghee Hahn, Ki-Whan Song, Kiwhan Choi, H. Choi, S. Lee, Changsub Lee, J. Song, Jin-Man Han, Kye Hyun Kyoung, Young-Hyun Jun
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引用次数: 7
Abstract
We present a new field effect mechanism on IGIDL in NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.
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