Defect-oriented non-intrusive RF test using on-chip temperature sensors

L. Abdallah, H. Stratigopoulos, S. Mir, J. Altet
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引用次数: 30

Abstract

We present a built-in, defect-oriented test approach for RF circuits that is based on thermal monitoring. A defect will change the power dissipation of the circuit under test from its expected range of values which, in turn, will induce a change in the expected temperature in the substrate near the circuit. Thus, an on-chip temperature sensor that monitors the temperature near the circuit can reveal the existence of the defect. This test approach has the key advantage of being non-intrusive and transparent to the design since the temperature sensor is not electrically connected to the circuit. We discuss the basics of thermal monitoring, the design of the temperature sensor, as well as the test scheme. The technique is demonstrated on fabricated chips where a temperature sensor is employed to monitor an RF low noise amplifier.
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采用片上温度传感器的缺陷导向非侵入式射频测试
我们提出了一种基于热监测的射频电路内置的、面向缺陷的测试方法。缺陷会改变被测电路的功耗,使其偏离预期值范围,进而导致电路附近基板的预期温度发生变化。因此,片上温度传感器监测电路附近的温度可以揭示缺陷的存在。这种测试方法具有非侵入性和设计透明的关键优势,因为温度传感器没有电连接到电路上。我们讨论了热监测的基本原理,温度传感器的设计,以及测试方案。采用温度传感器对射频低噪声放大器进行监测,并在自制芯片上进行了验证。
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