Si/SiGe terahertz quantum cascade emitters

D. Paul, S. Lynch, P. Townsend, Z. Ikonić, R. Kelsall, P. Harrison, S. Liew, D. Norris, A. Cullis, J. Zhang, H. Gamble, W. Tribe, D. D. Arnone
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引用次数: 1

Abstract

In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.
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Si/SiGe太赫兹量子级联发射器
在本文中,我们证明了电致发光在应变对称结构中具有多达600个活跃周期。该晶片还首次展示了在硅化硅晶片顶部生长应变对称Si/SiGe超晶格,硅化硅被设计为波导腔中的底部反射器。TEM图像显示,该结构具有良好的平面性和均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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