A 32dBm OOB-IIP3 BW-Extended 5G-NR Receiver with 4th-Order Gain-Boosted N-Path LNA

Zhixiang Liu, Shiyou Wei, Gengzhen Qi, Pui-in Mak
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Abstract

This paper reports a self-interference-resilient receiver (RX) for 5G-NR-FDD covering 0.5 to 2GHz. It incorporates a $4^{\text{th}}$-order gain-boosted N-path low-noise amplifier (LNA) and a $2^{\text{nd}}$-order baseband (BB) TIA to widen the −3dB RF-BW and also enhance the out-of-band (OOB) roll-off slope. Furthermore, a positive-feedback loop is created for the input-impedance matching purpose thanks to the impedance-translation property of the N-path network. Implemented in 65nm CMOS process, the simulation results show that with >54MHz RF-BW the RX achieves >24dB OOB rejection at 80MHz offset. When the offset frequency $(\Delta f)$ is twice the −3dB RF-BW, the RX achieves 32dBm OOB-IIP3, while consuming a reasonable power of 27 to 67mW. The noise figure (NF) ranges from 3.2 to 5.5dB and active area is $0.38\text{mm}^{2}$.
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基于4阶增益增强n径LNA的32dBm OOB-IIP3 bw扩展5G-NR接收机
本文报道了一种覆盖0.5 ~ 2GHz的5G-NR-FDD自抗干扰接收机(RX)。它包含一个$4^{\text{th}}$阶增益增强n路低噪声放大器(LNA)和一个$2^{\text{nd}}$阶基带(BB) TIA,以扩大- 3dB RF-BW并提高带外(OOB)滚降斜率。此外,由于n路径网络的阻抗转换特性,为输入阻抗匹配目的创建了一个正反馈回路。在65nm CMOS工艺中实现,仿真结果表明,在>54MHz的RF-BW下,RX在80MHz偏移时实现了>24dB的OOB抑制。当偏置频率$(\ δ f)$为- 3dB RF-BW的两倍时,RX达到32dBm OOB-IIP3,同时消耗27至67mW的合理功率。噪声系数(NF)为3.2 ~ 5.5dB,有效面积为$0.38\text{mm}^{2}$。
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