{"title":"A 32dBm OOB-IIP3 BW-Extended 5G-NR Receiver with 4th-Order Gain-Boosted N-Path LNA","authors":"Zhixiang Liu, Shiyou Wei, Gengzhen Qi, Pui-in Mak","doi":"10.1109/APCCAS55924.2022.10090370","DOIUrl":null,"url":null,"abstract":"This paper reports a self-interference-resilient receiver (RX) for 5G-NR-FDD covering 0.5 to 2GHz. It incorporates a $4^{\\text{th}}$-order gain-boosted N-path low-noise amplifier (LNA) and a $2^{\\text{nd}}$-order baseband (BB) TIA to widen the −3dB RF-BW and also enhance the out-of-band (OOB) roll-off slope. Furthermore, a positive-feedback loop is created for the input-impedance matching purpose thanks to the impedance-translation property of the N-path network. Implemented in 65nm CMOS process, the simulation results show that with >54MHz RF-BW the RX achieves >24dB OOB rejection at 80MHz offset. When the offset frequency $(\\Delta f)$ is twice the −3dB RF-BW, the RX achieves 32dBm OOB-IIP3, while consuming a reasonable power of 27 to 67mW. The noise figure (NF) ranges from 3.2 to 5.5dB and active area is $0.38\\text{mm}^{2}$.","PeriodicalId":243739,"journal":{"name":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS55924.2022.10090370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports a self-interference-resilient receiver (RX) for 5G-NR-FDD covering 0.5 to 2GHz. It incorporates a $4^{\text{th}}$-order gain-boosted N-path low-noise amplifier (LNA) and a $2^{\text{nd}}$-order baseband (BB) TIA to widen the −3dB RF-BW and also enhance the out-of-band (OOB) roll-off slope. Furthermore, a positive-feedback loop is created for the input-impedance matching purpose thanks to the impedance-translation property of the N-path network. Implemented in 65nm CMOS process, the simulation results show that with >54MHz RF-BW the RX achieves >24dB OOB rejection at 80MHz offset. When the offset frequency $(\Delta f)$ is twice the −3dB RF-BW, the RX achieves 32dBm OOB-IIP3, while consuming a reasonable power of 27 to 67mW. The noise figure (NF) ranges from 3.2 to 5.5dB and active area is $0.38\text{mm}^{2}$.