SiGe HBT quadrature VCO utilizing trifilar transformers

Jin-Siang Syu, C. Meng, G. Huang
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引用次数: 4

Abstract

A trifilar-coupling quadrature voltage-controlled oscillator (QVCO) is demonstrated using 0.35-mum SiGe heterojunction bipolar transistor (HBT) technology. The trifilar transformer consisting of one primary coil and two secondary coils is used in this work to separate the collector and base bias for output voltage swing optimization and also to replace a conventional transistor-coupling method for quadrature output generation, simultaneously. As a result, the trifilar-coupling QVCO achieves the 191.6-dBc/Hz FOM at the supply voltage of 1.2 V The on-chip passive single side-band (SSB) upconversion mixer is also demonstrated to fairly measure the quadrature accuracy of the QVCO. Consequently, the side-band rejection ratio of 37.7 dB is achieved.
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采用0.35 μ m SiGe异质结双极晶体管(HBT)技术,设计了一种三线耦合正交压控振荡器(QVCO)。在这项工作中,使用由一个初级线圈和两个次级线圈组成的三线变压器来分离集电极和基极偏置,以优化输出电压摆幅,同时也取代了传统的晶体管耦合方法来产生正交输出。结果表明,三线耦合QVCO在1.2 V电源电压下实现了191.6 dbc /Hz的FOM,片上无源单边带(SSB)上变频混频器也能很好地测量QVCO的正交精度。因此,获得了37.7 dB的边带抑制比。
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