Application of force fill Al-plug technology to 64 Mb DRAM and 0.35 /spl mu/m logic

Abstract

A novel high pressure (60 MPa) force fill Al-plug technology has been previously shown to be suitable for sub-half micron contact and via hole filling. This paper describes the first application of the new aluminum force fill technology to actual ULSI circuits-64 Mb DRAMs and 0.35 /spl mu/m Logic devices. For both applications, improved electrical performance and superior or equivalent yield has been demonstrated for the high pressure Al-plug approach as compared with the standard hole filling process (W-plug for logic devices and W-liner for DRAMs). Full bit functional 64 Mb generation DRAMs fabricated using the new aluminum force fill technology show nominal electrical behavior with no anomalous reliability issues.