{"title":"GaAs MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric","authors":"M. Hong","doi":"10.1109/ICSICT.1998.786061","DOIUrl":null,"url":null,"abstract":"Growth of an oxide mixture, Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/), in ultra-high vacuum, on clean and ordered GaAs[100] surface has produced atomically smooth oxide/GaAs interfaces with a low interfacial density of states. Both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates with inversion were demonstrated using this novel oxide as the gate dielectric and a conventional ion-implant technology. Depletion-mode GaAs MOSFETs with accumulation were also fabricated. The Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) films with thickness varying from 500 to 50 /spl Aring/ show a low leakage current density of 10/sup -9/ A/cm/sup 2/ at low gate bias up to 2.5 V, and electrical breakdown fields of >10 MV/cm.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.786061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Growth of an oxide mixture, Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/), in ultra-high vacuum, on clean and ordered GaAs[100] surface has produced atomically smooth oxide/GaAs interfaces with a low interfacial density of states. Both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates with inversion were demonstrated using this novel oxide as the gate dielectric and a conventional ion-implant technology. Depletion-mode GaAs MOSFETs with accumulation were also fabricated. The Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) films with thickness varying from 500 to 50 /spl Aring/ show a low leakage current density of 10/sup -9/ A/cm/sup 2/ at low gate bias up to 2.5 V, and electrical breakdown fields of >10 MV/cm.
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