{"title":"Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy","authors":"T. Ikari, K. Imai, S. Fukushima, M. Kondow","doi":"10.1109/ISDRS.2003.1272072","DOIUrl":null,"url":null,"abstract":"In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.
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