A 95% Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz

Abstract

A 2:1 351 V hard-switched boost converter was constructed using high-voltage GaN high-electron-mobility transistors grown on Si substrates and GaN Schottky diodes grown on Sapphire substrates. The high speed and low on-resistance of the GaN devices enables extremely fast switching times and low losses, resulting in a high conversion efficiency of 95% with 425-W output power at 1 MHz. The boost converter has a power density of 175 W/in3. To our knowledge, these results are the best reported on GaN devices, and the highest for 1MHz switching.