Jonghyun Cho, Myunghoi Kim, Joohee Kim, J. Pak, Joungho Kim, Hyungdong Lee, Junho Lee, Kunwoo Park
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引用次数: 15
Abstract
The effects of through-silicon via (TSV) depletion are analyzed based on the frequency- and time-domain measurements in this paper. As TSV dc bias voltage increases, a TSV depletion region is generated; this region decreases TSV noise coupling at frequencies below 1 GHz. It also creates duty-cycle distortion of the coupled signal, which results from the nonlinearity of the TSV.
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