Studies on the Mechanical, Structural, Optical, Electrical and Surface Properties of Sn Doped Ga2O3 (010) Single Crystals Grown by OFZ Technique

Abstract

This research work focuses on the growth of single crystals of undoped and Sn doped β-Ga2O3 varying doping concentration of 0.05, 0.1, 0.2 wt% by Optical Floating Zone technique. Single crystals of (010) orientation were obtained. The obtained crystals were fully transparent in NIR region and the transparency continued in the visible region as well as in the near UV region. On doping Sn with β-Ga2O3, the n type conductivity increases. This will be useful for optoelectronic applications. The mechanical, structural, optical, electrical and surface properties were measured. Characterizations such as Powder XRD, UV-Vis spectroscopy, micro Vickers hardness, HR-XRD, AFM, hall measurement were done on undoped and Sn doped Ga2O3 single crystals and the results are reported.