N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv
{"title":"The influence of micron-sized nodules on the electric-field districution in thin-film polarizers","authors":"N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv","doi":"10.1117/12.887565","DOIUrl":null,"url":null,"abstract":"The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"284 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.887565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.
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