{"title":"CMOS/SOS circuits for space applications","authors":"H. Veloric, R. Green","doi":"10.1109/SOI.1988.95457","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors have investigated the capability of CMOS/SOS circuits fabricated in a 1.25- mu m DLM technology. The circuits included delay chains, a shift register, gate arrays, and a 8KX8 SRAM. Accurate circuit simulations were possible using the device parameters and current modeling procedures. The preradiation and postradiation performances of circuits were compared to their calculated capability. This included performance under transient radiation conditions. 64K SRAMS were fabricated with an access time under 20 ns. These circuits have demonstrated total dose tolerance in excess of 1 Mrad (Si) and transient upset of 5*10/sup 11/ rad (Si)/s.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. The authors have investigated the capability of CMOS/SOS circuits fabricated in a 1.25- mu m DLM technology. The circuits included delay chains, a shift register, gate arrays, and a 8KX8 SRAM. Accurate circuit simulations were possible using the device parameters and current modeling procedures. The preradiation and postradiation performances of circuits were compared to their calculated capability. This included performance under transient radiation conditions. 64K SRAMS were fabricated with an access time under 20 ns. These circuits have demonstrated total dose tolerance in excess of 1 Mrad (Si) and transient upset of 5*10/sup 11/ rad (Si)/s.<>
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