O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato
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引用次数: 2
Abstract
Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.
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