Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura
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引用次数: 1
Abstract
Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.
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