Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947482
Ryo Kimura, Y. Kariya, N. Mizumura, K. Sasaki
The effects of temperatures on the rate of pressure-less sintered fatigue crack propagation were investigated in this study. For each test temperature, the Dowling-Begley's fatigue crack propagation law held true. Temperature effects on the behavior of fatigue crack propagation appeared mainly in the power exponent of the Dowling-Begley law.
{"title":"Temperature dependence of fatigue crack propagation rate of pressureless sintered Ag nanoparticles","authors":"Ryo Kimura, Y. Kariya, N. Mizumura, K. Sasaki","doi":"10.23919/LTB-3D.2017.7947482","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947482","url":null,"abstract":"The effects of temperatures on the rate of pressure-less sintered fatigue crack propagation were investigated in this study. For each test temperature, the Dowling-Begley's fatigue crack propagation law held true. Temperature effects on the behavior of fatigue crack propagation appeared mainly in the power exponent of the Dowling-Begley law.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129680806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947465
Weixin Fu, Bo Ma, H. Kuwae, S. Shoji, J. Mizuno
A direct bonding of polyoxymethelene (POM) was feasible at 100 °C by using self-assembled monolayers (SAM) as surface modification method. (3-Aminopropyl)triethoxysilane (APTES) and (3-Glycidyloxypropyl)trimethoxysilane (GOPTS) were applied in our work. Surface modification carried out with different VUV/O3 irradiation conditions showed different bonding strength. In addition, the bonding condition with highest strength had an average strength of 0.37 MPa. This technology was expected to be used in packaging for micro/nano electromechanical systems (MEMS/NMES), such as bio-/medical devices.
{"title":"A study on low temperature SAM modified POM direct bonding affected by VUV/O3 irradiation","authors":"Weixin Fu, Bo Ma, H. Kuwae, S. Shoji, J. Mizuno","doi":"10.23919/LTB-3D.2017.7947465","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947465","url":null,"abstract":"A direct bonding of polyoxymethelene (POM) was feasible at 100 °C by using self-assembled monolayers (SAM) as surface modification method. (3-Aminopropyl)triethoxysilane (APTES) and (3-Glycidyloxypropyl)trimethoxysilane (GOPTS) were applied in our work. Surface modification carried out with different VUV/O3 irradiation conditions showed different bonding strength. In addition, the bonding condition with highest strength had an average strength of 0.37 MPa. This technology was expected to be used in packaging for micro/nano electromechanical systems (MEMS/NMES), such as bio-/medical devices.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126890605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947443
R. Takigawa, E. Higurashi, T. Asano
Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
{"title":"Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si","authors":"R. Takigawa, E. Higurashi, T. Asano","doi":"10.23919/LTB-3D.2017.7947443","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947443","url":null,"abstract":"Wafer-level bonding of LiNbO<inf>3</inf> (LN) and Si with thermally grown SiO<inf>2</inf> layer is demonstrated using surface-activated bonding method for the realization of LiNbO<inf>3</inf>-on-Insulator (LNOI) on Si.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125389866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947430
M. K. Faiz, Takehiro Yamamoto, M. Yoshida
A low temperature and low pressure fluxless bonding of plateless Cu-Cu substrates has been achieved by transient liquid phase sintering of Ag and Sn-Bi eutectic powder mixture in a formic acid reducing environment. The effects of Sn-Bi addition amount and sintering temperature to the shear strength and microstructure were investigated. Remelting temperature of the sintered paste was also examined. Shear strength of 30 weight percentage added Sn-Bi that was sintered at 250°C was over than 20 MPa. The microstructure varied with the Sn-Bi addition amount, however, mainly consisted of Ag solid solution and/or Ag-Sn intermetallic compounds (IMCs), Bi-rich phase and Cu-Sn IMCs. No remelting event at Sn-Bi eutectic temperature was observed and the remelting temperature shifted to approximately 262°C, implying the possibility for higher operation temperature although the processing was performed at lower temperature.
{"title":"Sn-Bi added Ag-based transient liquid phase sintering for low temperature bonding","authors":"M. K. Faiz, Takehiro Yamamoto, M. Yoshida","doi":"10.23919/LTB-3D.2017.7947430","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947430","url":null,"abstract":"A low temperature and low pressure fluxless bonding of plateless Cu-Cu substrates has been achieved by transient liquid phase sintering of Ag and Sn-Bi eutectic powder mixture in a formic acid reducing environment. The effects of Sn-Bi addition amount and sintering temperature to the shear strength and microstructure were investigated. Remelting temperature of the sintered paste was also examined. Shear strength of 30 weight percentage added Sn-Bi that was sintered at 250°C was over than 20 MPa. The microstructure varied with the Sn-Bi addition amount, however, mainly consisted of Ag solid solution and/or Ag-Sn intermetallic compounds (IMCs), Bi-rich phase and Cu-Sn IMCs. No remelting event at Sn-Bi eutectic temperature was observed and the remelting temperature shifted to approximately 262°C, implying the possibility for higher operation temperature although the processing was performed at lower temperature.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128727941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947460
Michitaka Yamamoto, E. Higurashi, T. Suga, R. Sawada, T. Itoh
Au-Au room-temperature bonding in ambient air was demonstrated by applying argon and hydrogen gas mixture (Ar+H2) atmospheric-pressure (AP) plasma treatment to surface activated bonding. Although conventional Ar low-pressure plasma treatment improved bonding strength only within air exposure for 1 hour, Ar+H2 AP plasma treatment improved the bonding strength even after air exposure for 10 hours.
{"title":"Ar+H2 atmospheric-pressure plasma treatment for Au-Au bonding and influence of air exposure on surface contamination","authors":"Michitaka Yamamoto, E. Higurashi, T. Suga, R. Sawada, T. Itoh","doi":"10.23919/LTB-3D.2017.7947460","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947460","url":null,"abstract":"Au-Au room-temperature bonding in ambient air was demonstrated by applying argon and hydrogen gas mixture (Ar+H2) atmospheric-pressure (AP) plasma treatment to surface activated bonding. Although conventional Ar low-pressure plasma treatment improved bonding strength only within air exposure for 1 hour, Ar+H2 AP plasma treatment improved the bonding strength even after air exposure for 10 hours.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127696997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947466
H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno
Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
{"title":"Cu-Cu direct bonding by introducing Au intermediate layer","authors":"H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno","doi":"10.23919/LTB-3D.2017.7947466","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947466","url":null,"abstract":"Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133175473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947478
Salinee Choowitsakunlert, K. Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, R. Silapunt, H. Yokoi
An optical isolator employing a nonreciprocal guided-radiation mode conversion has been investigated. This device consists of a rib-type magneto-optic waveguide with a Si guiding layer. Relationship of waveguide parameters for isolator operation was clarified for various gaps. Fabrication processes of the magneto-optic waveguides are discussed by comparing waveguide parameters for isolator operation.
{"title":"Fabrication processes of magneto-optic waveguides with Si guiding layer for optical nonreciprocal devices","authors":"Salinee Choowitsakunlert, K. Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, R. Silapunt, H. Yokoi","doi":"10.23919/LTB-3D.2017.7947478","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947478","url":null,"abstract":"An optical isolator employing a nonreciprocal guided-radiation mode conversion has been investigated. This device consists of a rib-type magneto-optic waveguide with a Si guiding layer. Relationship of waveguide parameters for isolator operation was clarified for various gaps. Fabrication processes of the magneto-optic waveguides are discussed by comparing waveguide parameters for isolator operation.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"3 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132365312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-13DOI: 10.23919/LTB-3D.2017.7947480
R. Nishimura, Seiya Matsuoka, E. Higurashi, T. Suga, R. Sawada
In order to fabricate Au micromirrors using a method of simultaneous molding and low-temperature Au-Au bonding, a fabrication method of molding and bonding tools using diamond blade dicing is investigated. Diamond blade dicing of synthetic quartz glass substrates produced smooth sidewall surfaces with root-mean-square roughness of 8 nm in the sample translation direction and that of 56 nm in the perpendicular to the translation direction. Using these fabricated tools, Au micromirrors were successfully formed at 150 °C.
{"title":"Fabrication and evaluation of molding and bonding tools for Au micromirror formation","authors":"R. Nishimura, Seiya Matsuoka, E. Higurashi, T. Suga, R. Sawada","doi":"10.23919/LTB-3D.2017.7947480","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947480","url":null,"abstract":"In order to fabricate Au micromirrors using a method of simultaneous molding and low-temperature Au-Au bonding, a fabrication method of molding and bonding tools using diamond blade dicing is investigated. Diamond blade dicing of synthetic quartz glass substrates produced smooth sidewall surfaces with root-mean-square roughness of 8 nm in the sample translation direction and that of 56 nm in the perpendicular to the translation direction. Using these fabricated tools, Au micromirrors were successfully formed at 150 °C.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134110512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-16DOI: 10.23919/LTB-3D.2017.7947400
Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa
Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
{"title":"Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature","authors":"Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947400","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947400","url":null,"abstract":"Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134222857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-16DOI: 10.23919/LTB-3D.2017.7947434
K. Takeuchi, M. Fujino, Y. Matsumoto, T. Suga
In the previews study, we have proposed the room temperature bonding method for polyimide (PI) films and glass wafers that enables debonding even after high temperature process at 400 °C. However, the mechanism that the bond strength was affected by heating was not clear. In this work, we investigated the relationship between the heat treatment and the bond strength of PI films and glass wafers. From the XPS analysis, it was cleared that the fracture path of the PI film shifted to the interface between the PI and the Si intermediate layer from the inner PI film. We indicated the debonding process of the PI and the glass substrates bonded with Si and Fe layers.
{"title":"Room temperature bonding and debonding of PI film and glass substrate based on SAB method","authors":"K. Takeuchi, M. Fujino, Y. Matsumoto, T. Suga","doi":"10.23919/LTB-3D.2017.7947434","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947434","url":null,"abstract":"In the previews study, we have proposed the room temperature bonding method for polyimide (PI) films and glass wafers that enables debonding even after high temperature process at 400 °C. However, the mechanism that the bond strength was affected by heating was not clear. In this work, we investigated the relationship between the heat treatment and the bond strength of PI films and glass wafers. From the XPS analysis, it was cleared that the fracture path of the PI film shifted to the interface between the PI and the Si intermediate layer from the inner PI film. We indicated the debonding process of the PI and the glass substrates bonded with Si and Fe layers.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114349439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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