{"title":"A Stress-Tolerant Temperature-Stable RF MEMS Switched Capacitor","authors":"I. Reines, B. Pillans, Gabriel M. Rebeiz","doi":"10.1109/MEMSYS.2009.4805524","DOIUrl":null,"url":null,"abstract":"We present the design, fabrication, and measurement of an RF MEMS (Radio Frequency Micro-Electromechanical System) switched capacitor that exhibits reduced sensitivity to residual stress and temperature. The device is based on a circularly symmetric geometry with arc-type springs placed between the anchors and suspended beam. This design compensates for the effects of the residual biaxial stress in the beam, resulting in a pull-in voltage slope versus temperature of only -50 mV/ °C from -5 °C to 95 °C. Reducing the device sensitivity to residual stress improves the performance uniformity on a wafer-scale, and from wafer-to-wafer lots.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2009.4805524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
We present the design, fabrication, and measurement of an RF MEMS (Radio Frequency Micro-Electromechanical System) switched capacitor that exhibits reduced sensitivity to residual stress and temperature. The device is based on a circularly symmetric geometry with arc-type springs placed between the anchors and suspended beam. This design compensates for the effects of the residual biaxial stress in the beam, resulting in a pull-in voltage slope versus temperature of only -50 mV/ °C from -5 °C to 95 °C. Reducing the device sensitivity to residual stress improves the performance uniformity on a wafer-scale, and from wafer-to-wafer lots.
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