T. Elewa, B. Boukriss, A. Chovet, S. Cristoloveanu
{"title":"Low frequency noise spectroscopy in thin SIMOX MOS transistors","authors":"T. Elewa, B. Boukriss, A. Chovet, S. Cristoloveanu","doi":"10.1109/SOSSOI.1990.145730","DOIUrl":null,"url":null,"abstract":"The analysis of the low-frequency noise in SOI MOSFETs is addressed. A simple model is presented which takes into consideration the parallel combination of three sources of noise, associated respectively with the two interfaces and the SI film volume. This model is also convenient for the analysis of depletion-mode SOI transistors. The original point in partially-depleted N N/sup +/ N MOSFETs is that the noise contribution of the volume can be isolated by inverting the two interfaces. This model allowed the characterization of various types of SIMOX substrates fabricated by varying the implantation and annealing conditions.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"238 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The analysis of the low-frequency noise in SOI MOSFETs is addressed. A simple model is presented which takes into consideration the parallel combination of three sources of noise, associated respectively with the two interfaces and the SI film volume. This model is also convenient for the analysis of depletion-mode SOI transistors. The original point in partially-depleted N N/sup +/ N MOSFETs is that the noise contribution of the volume can be isolated by inverting the two interfaces. This model allowed the characterization of various types of SIMOX substrates fabricated by varying the implantation and annealing conditions.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
