Feasibility study on ultrafine-pitch Cu-Cu bonding using directed self-assembly (DSA)

M. Murugesan, T. Fukushima, K. Mori, H. Hashimoto, J. Bea, M. Koyanagi
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引用次数: 2

Abstract

A feasibility study was carried out for self-formation of metal wiring between LSI chips containing ultrafine-pitch Cu landing pads by employing a new concept of directed self-assembly (DSA) phenomena. Preliminary results suggest that it is highly feasible to electrically interconnect two LSI chips having Cu landing pads at 3μm pitch interval. Electrical contact between the flip-chip bonded dies was self-formed by dispersed Sn nano-dots in PS-b-PMMA (2:1) copolymer mixture after vacuum annealing at 280 °C.
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定向自组装超细间距Cu-Cu键合的可行性研究
采用定向自组装(DSA)现象的新概念,对含有超细间距铜着陆垫的LSI芯片间金属布线自形成的可行性进行了研究。初步结果表明,以3μm间距将两个具有Cu着陆垫的LSI芯片电互连是高度可行的。在280°C真空退火后,PS-b-PMMA(2:1)共聚物混合物中分散的Sn纳米点自形成倒装片键合模之间的电接触。
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