S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace
{"title":"Simulations of Ge based optically controlled field effect transistors","authors":"S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace","doi":"10.1109/GROUP4.2014.6961989","DOIUrl":null,"url":null,"abstract":"We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6961989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
